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JUYI JY14M Parameter BLDC Motor Driver MOSFET Hard Switched And High Frequency Circuits

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JUYI JY14M Parameter BLDC Motor Driver MOSFET Hard Switched And High Frequency Circuits

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Brand Name : JUYI

Model Number : JY14M

MOQ : 1 set

Packaging Details : PE bag+ carton

Place of Origin : China

Price : Negotiable

Delivery Time : 5-10 days

Payment Terms : T/T,L/C,Paypal

Supply Ability : 1000sets/day

Drain-Source Voltage : 40 V

Gate-Source Voltage : ±20V

Maximum Power Dissipation : 210W

Pulsed Drain Current : 720A

High Frequency Circuits : Yes

Color : black and white

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JY14M N Channel Enhancement Mode Power MOSFET for BLDC motor driver

GENERAL DESCRIPTION


The JY14M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on-resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in power switching application and a wide variety of other applications.


FEATURES
● 40V/200A, RDS(ON) =2.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation


APPLICATIONS
● Switching application
● Hard switched and high frequency circuits
● Power Management for Inverter Systems

Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)

Symbol Parameter Limit Unit
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage ± 20 V
ID Continuous Drain
Current		 Tc=25ºC 200 A
Tc=100ºC 130
IDM Pulsed Drain Current 720 A
PD Maximum Power Dissipation 210 W
TJ TSTG Operating Junction and Storage Temperature
Range		 -55 to +175 ºC
RθJC Thermal Resistance-Junction to Case 0.65 ºC/W
RθJA Thermal Resistance-Junction to Ambient 62


Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)

Symbol Parameter Conditions Min Typ Max Unit
Static Characteristics
BVDSS Drain-Source
Breakdown Voltage		 VGS=0V,IDS=250uA 40 V
IDSS Zero Gate Voltage
Drain Current		 VDS=100V,VGS=0V 1 uA
IGSS Gate-Body Leakage
Current		 VGS=± 20V,VDS=0V ± 100 nA
VGS(th) Gate Threshold
Voltage		 VDS= VGS, IDS=250uA 2.0 3.0 4.0 V
RDS(ON) Drain-Source
On-state Resistance		 VGS=10V,IDS=60A 2.5 mΩ
gFS Forward
Transconductance		 VDS=20V, IDS=60A 100 S


Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)

Symbol Parameter Conditions Min Typ Max Unit
Drain-Source Diode Characteristics
VSD Diode Forward
Voltage		 VGS=0V,ISD=100A 1.2 V
Trr Reverse Recovery Time ISD=100A
di/dt=100A/us		 38 ns
Qrr Reverse Recovery Charge 58 nC
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,
f=1MHZ		 1.2 Ω
Td(on) Turn-on Delay Time VDS=20V, RG=6Ω,
IDS =100A,
VGS=10V,		 34 ns
Tr Turn-on Rise Time 22
Td(off) Turn-off Delay Time 48
Tf Turn-off Fall Time 60
CISS Input Capacitance VGS=0V,
VDS=20V,
f=1.0MHz		 5714 pF
COSS Output Capacitance 1460
CRSS Reverse Transfer
Capacitance		 600
Qg Total Gate Charge VDS=30V,ID=100A,
VGS=10V		 160 nC
Qgs Gate-Source Charge 32
Qgd Gate-Drain Charge 58


JUYI JY14M Parameter BLDC Motor Driver MOSFET Hard Switched And High Frequency Circuits

DOWNLOAD JY14M USER MANUAL

JUYI JY14M Parameter BLDC Motor Driver MOSFET Hard Switched And High Frequency CircuitsJY14M.pdf


Product Tags:

high current mosfet driver

      

pwm mosfet driver

      
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